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SavantIC |
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD896A/898A/900A
DESCRIPTION
·With TO-220C package
www.dat·aCshoemet4pule.cmoment to type BD895A/897A/901A
·DARLINGTON
APPLICATIONS
·For use in output stages in audio equipment,
general amplifier,and analogue switching
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BD896A
VCBO
Collector-base voltage BD898A Open emitter
BD900A
BD896A
VCEO
Collector-emitter voltage BD898A Open base
BD900A
VEBO
IC
IB
Emitter-base voltage
Collector current-DC
Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
Open collector
TC=25
Ta=25
VALUE
-45
-60
-80
-45
-60
-80
-5
-8
-300
70
2
150
-65~150
UNIT
V
V
V
A
mA
W
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD896A/898A/900A
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
BD896A
BD898A IC=-100mA, IB=0
BD900A
VCEsat Collector-emitter saturation voltage IC=-4A ,IB=-16mA
VBE Base-emitter on voltage
IC=-4A ; VCE=-3V
ICBO
Collector
cut-off current
BD896A
BD898A
BD900A
VCB=-45V, IE=0
TC=100
VCB=-60V, IE=0
TC=100
VCB=-80V, IE=0
TC=100
BD896A VCE=-30V, IB=0
ICEO
Collector
cut-off current
BD898A VCE=-30V, IB=0
BD900A VCE=-40V, IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
VEC Diode forward voltage
ton Turn-on time
toff Turn-off time
IC=-4A ; VCE=-3V
IE=-8A
IC=3A ; IB1=-IB2=12mA
VBE=-3.5V;RL=10B;tp=20µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MIN TYP. MAX UNIT
-45
-60 V
-80
-2.8 V
-2.5 V
-0.2
-2.0
-0.2
-2.0
mA
-0.2
-2.0
-0.5 mA
-2 mA
750
-3.5 V
1 µs
5 µs
MAX
1.79
UNIT
/W
2
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