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SavantIC |
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD895/897/899/901
DESCRIPTION
·With TO-220C package
www.dat·aCshoemet4pule.cmoment to type BD896/898/900/902
·DARLINGTON
APPLICATIONS
·For use in output stages in audio
equipment ,general amplifier,and
analogue switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BD895
VCBO
Collector-base voltage
BD897
BD899
BD901
BD895
VCEO
Collector-emitter voltage
BD897
BD899
BD901
VEBO
Emitter-base voltage
IC Collector current-DC
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
45
60
80
100
45
60
80
100
5
8
300
70
2
150
-65~150
UNIT
V
V
V
A
mA
W
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD895/897/899/901
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
BD895
V(BR)CEO
Collector-emitter
breakdown voltage
BD897
BD899
IC=100mA, IB=0
BD901
VCEsat
VBE
ICBO
ICEO
IEBO
hFE
VEC
ton
toff
Collector-emitter saturation voltage IC=3A ,IB=12mA
Base-emitter on voltage
BD895
Collector cut-off current
BD897
BD899
BD901
BD895
IC=3A ; VCE=3V
VCB=45V, IE=0
TC=100
VCB=60V, IE=0
TC=100
VCB=80V, IE=0
TC=100
VCB=100V, IE=0
TC=100
VCE=30V, IB=0
Collector cut-off current
BD897
BD899
VCE=30V, IB=0
VCE=40V, IB=0
BD901 VCE=50V, IB=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
IC=3A ; VCE=3V
Diode forward voltage
IE=8A
Turn-on time
Turn-off time
IC=3A ; IB1=-IB2=12mA
VBE=-3.5V;RL=10B;tp=20µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MIN TYP. MAX UNIT
45
60
V
80
100
2.5 V
2.5 V
0.2
2.0
0.2
2.0 mA
0.2
2.0
0.2
2.0
0.5 mA
2 mA
750
3.5 V
1 µs
5 µs
MAX
1.79
UNIT
/W
2
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