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SavantIC |
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD646/648/650/652
DESCRIPTION
·With TO-220C package
www.dat·aCshoemet4pule.cmoment to type BD645/647/649/651
·DARLINGTON
APPLICATIONS
·For use in output stages in audio
equipment ,general amplifier,and
analogue switching applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BD646
VCBO
Collector-base voltage
BD648
BD650
BD652
BD646
VCEO
Collector-emitter voltage
BD648
BD650
BD652
VEBO
Emitter-base voltage
IC Collector current-DC
ICM Collector current-Pulse
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-80
-100
-120
-140
-60
-80
-100
-120
-5
-8
-12
-150
62.5
150
-65~150
UNIT
V
V
V
A
A
mA
W
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD646/648/650/652
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
BD646
V(BR)CEO
Collector-emitter
breakdown voltage
BD648
BD650
BD652
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
BD646
BD648
ICBO Collector cut-off current
BD650
BD652
BD646
BD648
ICEO Collector cut-off current
BD650
BD652
IEBO Emitter cut-off current
hFE DC current gain
CONDITIONS
IC=-30mA, IB=0
IC=-3A ,IB=-12mA
IC=-5A ,IB=-50mA
IC=-5A ,IB=-50mA
IC=-3A ; VCE=-3V
VCB=-60V, IE=0
VCB=-40V, IE=0 ;TC=150
VCB=-80V, IE=0
VCB=-50V, IE=0 ;TC=150
VCB=-100V, IE=0
VCB=-60V, IE=0 ;TC=150
VCB=-120V, IE=0
VCB=-70V, IE=0 ;TC=150
VCE=-30V, IB=0
VCE=-40V, IB=0
VCE=-50V, IB=0
VCE=-60V, IB=0
VEB=-5V; IC=0
IC=-3A ; VCE=-3V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MIN
-60
-80
-100
-120
TYP.
MAX UNIT
V
-2.0 V
-2.5 V
-3.0 V
-2.5 V
-0.2
-2.0
-0.2
-2.0 mA
-0.2
-2.0
-0.2
-2.0
-0.5 mA
-5 mA
750
MAX
2.0
UNIT
/W
2
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