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SavantIC |
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD312
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·High DC current gain
·Excellent safe operating area
·Complement to type BD311
APPLICATIONS
·Designed for power amplifier applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current(peak)
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-60
-60
-5
-10
-20
-4
115
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.52
UNIT
/W
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD312
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ; IB=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A
VBEsat
Base-emitter saturation voltage
VBE Base-emitter on voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
IC=-5A ;IB=-0.5A
IC=-5A ;VCE=-4V
VCB=rated;IE=0
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-5A ; VCE=-4V
hFE-2
fT
DC current gain
Transition frequency
IC=-10A ; VCE=-4V
IC=-0.5A ; VCE=-10V,f=1MHz
MIN TYP. MAX UNIT
-60 V
-1.0 V
-1.8 V
-1.5 V
-1.0 mA
-1.0 mA
25
5
4 MHz
2
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