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SavantIC |
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD311
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·High DC current gain
·Excellent safe operating area
·Complement to type BD312
APPLICATIONS
·Designed for power amplifier applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current(peak)
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
60
60
5
10
20
4
115
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.52
UNIT
/W
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD311
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A
VBEsat
Base-emitter saturation voltage
VBE Base-emitter on voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
IC=5A ;IB=0.5A
IC=5A ;VCE=4V
VCB=rated;IE=0
VEB=7V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=4V
hFE-2
fT
DC current gain
Transition frequency
IC=10A ; VCE=4V
IC=0.5A ; VCE=10V,f=1MHz
MIN TYP. MAX UNIT
60 V
1.0 V
1.8 V
1.5 V
1.0 mA
1.0 mA
25
5
4 MHz
2
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