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SavantIC |
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD249/A/B/C
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPN package
·Complement to type BD250/A/B/C
·125 W at 25°C case temperature
·25 A continuous collector current
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
BD249
VCEO
Collector-emitter voltage
BD249A
BD249B
BD249C
BD249
VCBO
Collector-base voltage
BD249A
BD249B
BD249C
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open base
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
45
60
80
100
55
70
90
115
5
25
40
5
125
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
1.0
UNIT
/W
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD249/A/B/C
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD249
V(BR)CEO
Collector-emitter
breakdown voltage
BD249A
BD249B
IC=30mA ;IB=0
BD249C
VCEsat-1 Collector-emitter saturation voltage
IC=15A ;IB=1.5A
VCEsat-2 Collector-emitter saturation voltage
IC=25A ;IB=5A
VBE-1
Base-emitter on voltage
IC=15A ; VCE=4V
VBE-2
Base-emitter on voltage
IC=25A ; VCE=4V
ICEO
Collector
cut-off current
BD249/249A
VCE=30V; IB=0
BD249B/249C VCE=60V; IB=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.5A ; VCE=4V
hFE-2
DC current gain
IC=15A ; VCE=4V
hFE-3
DC current gain
IC=25A ; VCE=4V
Switching times
ton Turn-on time
toff Turn-off time
IC=1A;
IB1=-IB2=0.5A
RL=5A
MIN TYP. MAX UNIT
45
60
V
80
100
1.8 V
4V
2V
4V
1 mA
1 mA
25
10
5
0.3 µs
0.9 µs
2
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