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PDF MS1008 Data sheet ( Hoja de datos )

Número de pieza MS1008
Descripción RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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No Preview Available ! MS1008 Hoja de datos, Descripción, Manual

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
wRwwF.da&tashMeeIt4Cu.cRomOWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
30 MHz
50 VOLTS
IMD = –30 dB
POUT = 150 WATTS
GP = 14 dB MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1008 is a 50V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting to achieve extreme ruggedness
under severe operating conditions.
MS1008
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
110
55
4.0
10
233
+200
-65 to +150
Unit
V
V
V
A
W
°C
°C
Thermal Data
RTH(J-C)
Junction-Case Thermal Resistance
0.75 °C/W
Rev A 11/2005
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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MS1008 pdf
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
www.datasheet4u.com
PACKAGE MECHANICAL DATA
MS1008
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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