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SavantIC |
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1073
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20 package
·High DC current gain
·DARLINGTON
·Low saturation voltage
APPLICATIONS
·Audio power amplifiers
·Relay and solenoid drivers
·Motor controls
·General purpose power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current-continuous
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
CHARACTERISTICS
R:jc
Thermal resistance junction to case
VALUE
300
250
30
4
0.3
60
150
-55~150
UNIT
V
V
V
A
A
W
MAX
2.0
UNIT
/W
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1073
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=0.1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=1A;IB=10mA
VBEsat
Base-emitter saturation voltage
IC=1A;IB=10mA
ICBO Collector cut-off current
VCB=300V; IE=0
IEBO Emitter cut-off current
VEB=30V; IC=0
hFE DC current gain
IC=2A ; VCE=2V
MIN TYP. MAX UNIT
300 V
250 V
30 V
1.5 V
2.0 V
0.1 mA
0.1 mA
1000
2
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