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Inchange Semiconductor |
www.datIanshceheta4un.cgome Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
With TO-126 package
Complement to type BD233/235 /237
APPLICATIONS
For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Product Specification
BD234 BD236 BD238
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BD234
VCBO
Collector-base voltage
BD236 Open emitter
BD238
BD234
VCEO
Collector-emitter voltage BD236 Open base
BD238
VEBO
Emitter -base voltage
Open collector
IC Collector current (DC)
ICM Collector current-Peak
PC Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-45
-60
-100
-45
-60
-80
-5
-2
-6
25
150
-65~150
UNIT
V
V
V
A
A
W
www.datIanshceheta4un.cgome Semiconductor
Silicon PNP Power Transistors
Product Specification
BD234 BD236 BD238
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBE Base-emitter on voltage
IC=-1A ; VCE=-2V
VCEO(SUS)
Collector-emitter
sustaining voltage
BD234
BD236 IC=-0.1A; IB=0
BD238
BD234 VCB=-45V; IE=0
ICBO Collector cut-off current BD236 VCB=-60V; IE=0
BD238 VCB=-100V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-150mA ; VCE=-2V
hFE-2
DC current gain
IC=-1A ; VCE=-2V
fT Transition frequency
IC=-250mA; VCE=-10V
MIN TYP. MAX UNIT
-0.6 V
-1.3 V
-45
-60 V
-80
-100
A
-1 mA
40
25
3 MHz
2
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