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Infineon Technologies |
www.DataSheet4U.com
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Low On-Resistance RDS(on)
• Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
Product Summary
VDS 30 V
RDS(on) max. SMD version 5.9 mΩ
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N03S2L-06
SPB80N03S2L-06
SPI80N03S2L-06
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67042-S4088
Q67042-S4089
Q67042-S4092
Marking
2N03L06
2N03L06
2N03L06
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=20A, VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
240
15
6
±20
150
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09
www.DataSheet4U.com
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
- 0.68 1 K/W
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID = 80 µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=80A
VGS=4.5V, ID=80A, SMD version
Drain-source on-state resistance4)
VGS=10V, ID=80A
VGS=10V, ID=80A, SMD version
V(BR)DSS 30
-
-V
VGS(th)
1.2 1.6
2
IDSS
IGSS
µA
- 0.01 1
- 10 100
- 1 100 nA
RDS(on)
-
mΩ
7 9.5
- 6.6 9.2
RDS(on)
-
5 6.2
- 4.6 5.9
1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 120A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
Page 2
2003-05-09
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