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Inchange Semiconductor |
Inchange Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
DESCRIPTION
With TO-126 package
Complement to type BD433/435/437
APPLICATIONS
For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Product Specification
BD434/436/438
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD434
VCBO
Collector-base voltage BD436
BD438
BD434
VCEO
Collector-emitter voltage BD436
BD438
VEBO
Emitter -base voltage
IC Collector current (DC)
ICM Collector current-Peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-22
-32
-45
-22
-32
-45
-5
-4
-7
-1
36
150
-65~150
UNIT
V
V
V
A
A
A
W
Inchange Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
Collector-emitter
saturation voltage
BD434/436
BD438
IC=-2A; IB=-0.2A
BD434/436
VBE Base-emitter on voltage
IC=-2A ; VCE=-1V
BD438
VCEO(SUS)
Collector-emitter
sustaining voltage
BD434
BD436
BD438
IC=-0.1A; IB=0
BD434
ICES Collector cut-off current BD436
VCB=-22V; IE=0
VCB=-32V; IE=0
BD438
VCB=-45V; IE=0
BD434
ICES Collector cut-off current BD436
VCE=-22V; VBE=0
VCE=-32V; VBE=0
BD438
VCE=-45V; VBE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
BD434/436
BD438
IC=-10mA ; VCE=-5V
hFE-2
DC current gain
IC=-0.5A ; VCE=-1V
hFE-3
DC current gain
BD434/436
BD438
IC=-2A ; VCE=-1V
fT Transition frequency
IC=-250mA; VCE=-1V
Product Specification
BD434/436/438
MIN TYP. MAX UNIT
-0.5
-0.2
-0.6
V
-1.1
V
-1.2
-22
-32 V
-45
-100
A
-100
A
-1 mA
40
130
30
85 140
50
40
3 MHz
2
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