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P5504EVG 반도체 회로 부품 판매점

P-Channel Logic Level Enhancement Mode Field Effect Transistor



Niko 로고
Niko
P5504EVG 데이터시트, 핀배열, 회로
NIKO-SEM P-Channel Logic Level Enhancement
www.DataSheet4U.com
Mode Field Effect Transistor
P5504EVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
55m
ID
-5.5A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
LIMITS
-40
±20
-5.5
-4.5
-20
2.5
1.3
-55 to 150
275
UNITS
V
V
A
W
°C
MAXIMUM
50
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
-40
-1 -1.5 -2.5
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V, TJ = 125 °C
1
µA
10
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = -5V, VGS = -10V
VGS = -4.5V, ID = -4.5A
VGS = -10V, ID = -5.5A
VDS = -10V, ID = -5.5A
-20
65
38
11
A
94
m
55
S
SEP-30-2004
1


P5504EVG 데이터시트, 핀배열, 회로
NIKO-SEM P-Channel Logic Level Enhancement
www.DataSheet4U.com
Mode Field Effect Transistor
P5504EVG
SOP-8
Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -10V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -5.5A
VDS = -20V,
ID -1A, VGS = -10V, RGS = 6
690
310
75
14
2.2
1.9
6.7 13.4
9.7 19.4
19.8 35.6
12.3 22.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = IS, VGS = 0V
-1.3
-2.6
-1
Reverse Recovery Time
trr IF = -5 A, dlF/dt = 100A / µS
15.5
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2 .
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
7.9
pF
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P5504EVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
SEP-30-2004
2




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P5504EVG transistor

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