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Alpha & Omega Semiconductors |
AO4404B
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4404B uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
www.DataSheet4oUp.ceormation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be used
to bypass the source inductance. Standard Product
AO4404B is Pb-free (meets ROHS & Sony 259
specifications).
Features
VDS (V) = 30V
ID = 8.5A (VGS = 10V)
RDS(ON) < 24mΩ (VGS = 10V)
RDS(ON) < 30mΩ (VGS = 4.5V)
RDS(ON) < 48mΩ (VGS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
S
S
S
G
SOIC-8
D
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation TA=70°C
Avalanche Current B
Repetitive avalanche energy 0.3mH B
PD
IAR
EAR
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
8.5
7.1
60
2.8
1.8
15
34
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
37
70
26
Max
45
100
36
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
AO4404B
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
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Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8.5A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=8.5A
VGS=2.5V, ID=5A
Forward Transconductance
VDS=5V, ID=5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
0.7
40
10
0.002
1
18
25
22
32
26
0.71
1
5
100
1.5
24
30
30
48
1
4.5
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
900 1100
88
65
0.95 1.5
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=4.5V, VDS=15V, ID=8.5A
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=6Ω
10 12
1.8
3.75
3.2
3.5
21.5
nC
nC
nC
ns
ns
ns
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
2.7
16.8 20
8 12
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev0: Feb 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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