|
Microsemi Corporation |
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225
Devices
www.DataSheet4U.com
2N1711
2N1890
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Impedance
1) Derate linearly 4.57 mW/0C for TA > 250C
2) Derate linearly 17.2 mW/0C for TC > 250C
Symbol
VCBO
VEBO
IC
PT
TJ, Tstg
Symbol
ZθJX
2N1711 2N1890
75 100
7.0
500
0.8
3.0
-65 to +200
Max.
58
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 µAdc
2N1711, S
2N1890, S
V(BR)CBO
Collector-Emitter Breakdown Voltage
RBE = 10 Ω, IC = 100 mAdc
2N1711, S
2N1890, S
V(BR)CER
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
2N1711, S
2N1890, S
V(BR)CEO
Emitter-Base Breakdown Voltage
IE = 100 µAdc
Collector-Base Cutoff Current
V(BR)EBO
VCB = 60 Vdc
2N1711
ICBO
VCB = 80 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
2N1890
IEBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Unit
Vdc
Vdc
mAdc
W
W
0C
Unit
0C/W
TO-5*
*See appendix A for package
outline
Min. Max.
Unit
75 Vdc
100
50 Vdc
80
30 Vdc
60
7.0 Vdc
10 ηAdc
10
5.0 ηAdc
120101
Page 1 of 2
2N1711, 2N1890 JAN SERIES
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
2N1711, S
IC = 150 mAdc, IB = 15 mAdc
2N1711, S
2N1890, S
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Saturation Voltage
2N1890, S
www.DataSheet4U.com IC = 150 mAdc, IB = 15 mAdc
IC = 50 mAdc, IB = 5.0 mVdc
2N1890, S
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 5.0 mAdc, VCE = 10 Vdc
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc; f = 20 MHz
Small-Signal Short-Circuit Input Impedance
IC = 5.0 mAdc, VCB = 10 Vdc
Small-Signal Short-Circuit Output Admittance
IC = 5.0 mAdc, VCB = 10 Vdc
2N1711, S
2N1890, S
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
2N1711, S
2N1890, S
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See figure 1 of MIL-PRF-19500/225)
(3) Pulse Test: Pulse Width 250 to 350µs, Duty Cycle ≤ 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
hfe
hib
hob
Cobo
ton + toff
Min. Max. Unit
20
100 300
50
1.5
5.0
1.2
1.3
0.9
Vdc
Vdc
80 200
90 270
3.5 12
4.0 8.0
1.0
.03
8.0 25
5.0 15
30
Ω
µΩ
pF
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
|