BDX53 반도체 회로 부품 판매점
(BDX5xx) NPN PLASTIC POWER TRANSISTORS
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 TRANSYS |
Transys
Electronics
LIMITED
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TO-220 Plastic Package
BDX53, BDX53A, BDX53B, BDX53C
BDX54, BDX54A, BDX54B, BDX54C
BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS
BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS
Power Darlingtons for Linear and Switching Applications
BF
C
E
12 3
D
G
J
M
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
DIM MIN . MAX.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J 0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
O DEG 7
4
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 3 A; IB = 12 mA
D.C. current gain
IC = 3 A; VCE = 3 V
VCBO
VCEO
IC
Ptot
Tj
VCEsat
hFE
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
VCBO
VCEO
VEBO
53
54
max. 45
max. 45
max.
max.
max.
53A 53B
54A 54B
60 80
60 80
8.0
60
150
53C
54C
100
100
V
V
A
W
°C
max.
2.0
V
min.
750
53
54
max. 45
max. 45
max.
53A 53B
54A 54B
60 80
60 80
5.0
53C
54C
100
100
V
V
V
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BDX53, BDX53A, BDX53B, BDX53C
BDX54, BDX54A, BDX54B, BDX54C
Collector current
Collector current (Peak value)
Base current
Total power dissipation upto TC=25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to case
From junction to ambient
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCB = 45 V
IB = 0; VCB = 60 V
IB = 0; VCB = 80 V
IB = 0; VCB = 100 V
IB = 0; VCE = 22 V
IB = 0; VCE = 30 V
IB = 0; VCE = 40 V
IB = 0; VCE = 50 V
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 100 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 3 A; IB = 12 mA
D.C. current gain
IC = 3 A; VCE = 3 V
Small signal current gain
IC = 3 A; VCE = 4 V; f = 1.0 MHz
Output capacitance f = 1.0 MHz
IE = 0; VCB = 10 V
NPN
PNP
Parallel-diode forward voltage
IF = 3 A
IF = 8 A
IC max.
ICM max.
IB max.
Ptot max.
max.
Tj max.
Tstg
Rth j–c
Rth j–a
8.0
12
0.2
60
0.48
150
–65 to +150
A
A
A
W
W/°C
°C
ºC
2.08 °C/W
7.0 °C/W
53 53A 53B 53C
54 54A 54B 54C
ICBO
ICBO
ICBO
ICBO
ICEO
ICEO
ICEO
ICEO
max. 0.2 – – – mA
max. – 0.2 – – mA
max. – – 0.2 – mA
max. – – – 0.2 mA
max. 0.5 – – – mA
max. – 0.5 – – mA
max. – – 0.5 – mA
max. – – – 0.5 mA
IEBO
max.
2.0
mA
VCEO(sus)* min. 45
VCBO
min. 45
VEBO
min.
60 80 100 V
60 80 100 V
5.0 V
VCEsat*
VBEsat*
max.
max.
2.0
2.5
V
V
hFE* min.
750
|hfe|
min.
4.0
Co max.
Co max.
300
200
pF
pF
VF max.
VF typ.
2.5
2.5
V
V
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%
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BDX53 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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