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ST Microelectronics |
® BF420
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
Ordering Code
BF420
www.DataSheet4U.BcoFm4 2 0 -A P
Marking Package / Shipment
BF420 TO-92 / Bulk
BF420 TO-92 / Ammopack
s SILICON EPITAXIAL PLANAR NPN HIGH
VOLTAGE TRANSISTOR
s TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
s THE PNP COMPLEMENTARY TYPE IS
BF421
APPLICATIONS
s VIDEO AMPLIFIER CIRCUITS (RGB
CATHODE CURRENT CONTROL)
s TELEPHONE WIRELINE INTERFACE (HOOK
SWITCHES, DIALER CIRCUITS)
TO-92
Bulk
TO-92
Ammopack
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
ICM Collector Peak Current (tp < 5 ms)
Ptot Total Dissipation at TC = 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
February 2003
Value
300
300
5
500
600
830
-65 to 150
150
Unit
V
V
V
mA
mA
mW
oC
oC
1/5
BF420
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
Rthj-Case • Thermal Resistance Junction-Case
Max
Max
150
50
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
www.DataSheet4U.com
IEBO
V(BR)CEO∗
V(BR)CBO
V(BR)EBO
VCE(sat)∗
Collector Cut-off
Current (IE = 0)
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Breakdown Voltage
(IB = 0)
Collector-Base
Breakdown Voltage
(IE = 0)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
VCB = 200 V
VCB = 200 V
VCB = 300 V
VEB = 5 V
IC = 10 mA
IC = 100 µA
IE = 100 µA
IC = 30 mA
TC = 150 oC
IB = 5 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 30 mA
IB = 5 mA
hFE∗ DC Current Gain
IC = 25 mA
VCE = 20 V
fT Transition Frequency IC = 10 mA VCE = 10 V f =20 MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V f = 1MHz
CEBO
Emitter-Base
Capacitance
IC = 0
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
VEB = 2 V f = 1MHz
Min.
300
300
5
50
60
Typ.
6
22
Max.
10
10
100
50
0.6
1.2
Unit
nA
µA
µA
nA
V
V
V
V
V
MHz
pF
pF
2/5
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