(PDF) MS1253 Datasheet - RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS

Número de pieza	MS1253
Descripción	RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS
Fabricantes	Advanced Power Technology
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No Preview Available ! www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS Features • 50 MHz • 12.5 VOLTS • POUT = 70 WATTS • Gp = 10 dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely stable and capable of withstanding high VSWR under operating conditions. MS1253 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO PDISS IC Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Device Current TJ Junction Temperature TSTG Storage Temperature Value 45 18 3.5 183 12.0 200 -65 to +150 Unit V V V W A °C °C Thermal Data RTH(J-C) Thermal Resistance Junction-case 1.05 °C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 1 page

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PDF MS1253 Data sheet ( Hoja de datos )