(PDF) BM100-28 Datasheet - NPN SILICON RF POWER TRANSISTOR

Número de pieza	BM100-28
Descripción	NPN SILICON RF POWER TRANSISTOR
Fabricantes	ASI
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No Preview Available ! www.DataSheet4U.com BM100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BM100-28 is Designed for high power VHF Applications up to 200 MHz. FEATURES: • Common Emitter • PG = 8.5 dB at 20 W/175 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 20 A VCEO 33 V VCES 65 V VEBO PDISS TJ TSTG θJC 4.0 V 270 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 0.65 OC/W PACKAGE STYLE .500 6L FLG 1 = COLLECTOR 2 = BASE 3&4 = EMITTER CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS BVCEO IC = 50 mA BVCES IC = 100 mA BVEBO IE = 5.0 mA hFE VCE = 5.0 V IC = 1.0 A MINIMUM TYPICAL MAXIMUM 33 65 4.0 10 UNITS V V V --- CCB VVB = 28 V f = 1.0 MHz 200 pF PG VCC = 28 V POUT = 100 W f = 175 MHz 8.5 ηC 60 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF BM100-28 Data sheet ( Hoja de datos )