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AO3400A 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



Alpha & Omega Semiconductors 로고
Alpha & Omega Semiconductors
AO3400A 데이터시트, 핀배열, 회로
www.DataSheet4U.com
AO3400A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3400A uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3400A is
Pb-free (meets ROHS & Sony 259 specifications).
FFeeaattuurreess
VVDDSS(V(V))==3300VV
IDID==51.17AA (V(VGGSS==1100VV) )
RRDDSS(O(ONN) )<<2164.5.5mmΩΩ((VVGGSS==1100VV))
RRDDSS(O(ONN) )<<3128mmΩΩ(V(VGGSS==44.5.5VV))
RDS(ON) < 48m(VGS = 2.5V)
Rg,Ciss,Coss,Crss Tested
TO-236
(SOT-23)
Top View
G
S
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
5.7
4.7
25
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


AO3400A 데이터시트, 핀배열, 회로
AO3400A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250uA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=5.7A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VGS=2.5V, ID=3A
Forward Transconductance
VDS=5V, ID=5.7A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
30
TJ=125°C
0.7
25
TJ=125°C
1
5
100
1 1.5
22 26.5
31 38
25.4 32
34 48
26
0.72 1.0
2.0
V
uA
nA
V
A
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
900 1100
88
65
0.95 1.5
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=5.7A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.6,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=5.7A, dI/dt=100A/us
Qrr Body Diode Reverse Recovery Charge IF=5.7A, dI/dt=100A/us
10 13
1.8
3.75
3.2
3.5
21.5
2.7
16.8 20
8
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.
8.5
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
0.0
D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. 40
A
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper#, Din IaVs/t0il!l air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F: The current rating is based on the t 10s thermal resistance rating.
Rev0: Apr. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com




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