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Infineon Technologies |
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Final data
SPP08N50C3, SPI08N50C3
SPA08N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
560
0.6
7.6
V
Ω
A
• Periodic avalanche rated
P-TO220-3-31 P-TO262-3-1 P-TO220-3-1
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO220-3-31
1 23
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP08N50C3
SPI08N50C3
SPA08N50C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4567
P-TO262-3-1 Q67040-S4568
P-TO220-3-31 Q67040-S4576
Marking
08N50C3
08N50C3
08N50C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_I
SPA
7.6
4.6
22.8
230
7.61)
4.61)
22.8
230
Unit
A
A
mJ
0.5 0.5
7.6 7.6
±20 ±20
±30 ±30
83 32
-55...+150
A
V
W
°C
Page 1
2003-06-27
www.DataSheet4U.com
Final data
SPP08N50C3, SPI08N50C3
SPA08N50C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 400 V, ID = 7.6 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s 3)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA FP
Tsold
Values
min. typ. max.
- - 1.5
- - 3.9
- - 62
- - 80
- - 260
Unit
K/W
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=7.6A
500
-
-
600
-
-
Gate threshold voltage
VGS(th) ID=350µA, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS
VDS=500V, VGS=0V,
Tj=25°C
- 0.5 1
Tj=150°C
- - 100
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
VGS=20V, VDS=0V
VGS=10V, ID=4.6A
Tj=25°C
Tj=150°C
f=1MHz, open drain
-
-
-
-
- 100
0.5 0.6
1.5 -
1.2 -
Unit
V
µA
nA
Ω
Page 2
2003-06-27
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