KRX105E 반도체 회로 부품 판매점
EPITAXIAL PLANAR PNP/NPN TRANSISTOR
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 KEC |
www.DataSheet4U.com
SEMICONDUCTOR
TECHNICAL DATA
KRX105E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌIncluding two devices in TESV.
(Thin Extreme Super mini type with 5 pin.)
ᴌWith Built-in bias resistors.
ᴌSimplify circuit design.
ᴌReduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1 C
Q2
C
B
B1
1 5 DIM MILLIMETERS
A 1.6 +_ 0.05
A1 1.0+_ 0.05
2 B 1.6+_ 0.05
B1 1.2+_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
P P J 0.12+_ 0.05
P5
R1
B
R1
B
E
R1=4.7KΩ
(Q1, Q 2 COMMON)
E
1. Q 1 COMMON (EMITTER)
2. Q 1 IN (BASE)
3. Q 2 COMMON (EMITTER)
4. Q 2 OUT (COLLECTOR)
5. Q 1 OUT (COLLECTOR)
Q 2 IN (BASE)
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
54
Marking
5
Type Name
4
Q2
Q1
BE
Q1 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Q2 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Q1, Q2 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
2002. 1. 24
Revision No : 1
12 3
SYMBOL
VCBO
VCEO
VEBO
IC
SYMBOL
VCBO
VCEO
VEBO
IC
SYMBOL
PC *
Tj
Tstg
123
RATING
50
50
5
100
UNIT
V
V
V
Ὠ
RATING
-50
-50
-5
-100
UNIT
V
V
V
Ὠ
RATING
200
150
-55ᴕ150
UNIT
Ὥ
ᴱ
ᴱ
1/3
KRX105E
Q1 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistor
Note : * Characteristic of Transistor Only.
ICBO
IEBO
hFE
VCE(sat)
fT *
R1
TEST CONDITION
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1Ὠ
IC=10Ὠ, IB=0.5Ὠ
VCE=10V, IC=5Ὠ
MIN.
-
-
120
-
-
-
TYP.
-
-
-
0.1
250
4.7
MAX.
100
100
-
0.3
-
-
UNIT.
ὦ
ὦ
V
ὲ
ὶ
Q2 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
ICBO
IEBO
hFE
VCE(sat)
fT *
Input Resistor
Note : * Characteristic of Transistor Only.
R1
TEST CONDITION
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-1Ὠ
IC=-10Ὠ, IB=-0.5Ὠ
VCE=-10V, IC=-5Ὠ
MIN.
-
-
120
-
-
-
TYP.
-
-
-
-0.1
250
4.7
MAX.
-100
-100
-
-0.3
-
-
UNIT.
ὦ
ὦ
V
ὲ
ὶ
2002. 1. 24
Revision No : 1
2/3
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( kec )
KRX105E transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
KRX105E
EPITAXIAL PLANAR PNP/NPN TRANSISTOR - KEC
KRX105U
EPITAXIAL PLANAR PNP/NPN TRANSISTOR - KEC