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KHB019N20F2 반도체 회로 부품 판매점

N CHANNEL MOS FIELD EFFECT TRANSISTOR



KEC 로고
KEC
KHB019N20F2 데이터시트, 핀배열, 회로
www.DataSheet4U.com S E M I C O N D U C TO R
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC converters
and switching mode power supplies.
FEATURES
VDSS=200V, ID=19A
Drain-Source ON Resistance : RDS(ON)=0.18
Qg(typ.)=35nC
@VGS = 10V
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC
SYMBOL
KHB019N20F1 UNIT
KHB019N20P1
KHB019N20F2
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25
@TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
200
30
19 19*
12.1 12.1*
76 76*
250
14
4.5
140 50
1.12 0.4
150
-55 150
V
V
A
mJ
mJ
V/ns
W
W/
Thermal Resistance, Junction-to-Case RthJC
0.89
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.5 /W
- /W
62.5 /W
PIN CONNECTION
D
G
2007. 5. 10
S
Revision No : 0
KHB019N20P1/F1/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB019N20P1
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB019N20F1
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB019N20F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/7


KHB019N20F2 데이터시트, 핀배열, 회로
KHB019N20P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=200V, VGS=0V,
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Vth
IGSS
RDS(ON)
VDS=VGS, ID=250 A
VGS= 30V, VDS=0V
VGS=10V, ID=9.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=160V, ID=19A
VGS=10V
(Note4,5)
Qgd
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
td(on)
tr
td(off)
tf
Ciss
VDD=100V
RL=5
RG=25
(Note4,5)
Reverse Transfer Capacitance
Crss VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Source-Drain Diode Ratings
Coss
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=19A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=19A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =1mH, IS=19A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 19A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
200 - - V
- 0.18 - V/
- - 10 A
2 - 4V
- - 100 nA
- 0.14 0.18
- 35 44
- 4.8 - nC
- 18 -
- 12 30
- 33 70
ns
- 130 270
- 75 160
- 900 1170
-
213 277
pF
- 80 104
- - 19
A
- - 76
- - 1.5 V
- 215 -
ns
-2-
C
2007. 5. 10
Revision No : 0
2/7




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KHB019N20F2 transistor

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