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PDF GM1213 Data sheet ( Hoja de datos )
| Número de pieza | GM1213 | |
| Descripción | PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | GTM | |
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GM1213
ISSUED DATE :2003/05/07
REVISED DATE :2004/12/14B
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GM1213 is designed for using in power amplifier applications or power switching applications.
Package Dimensions
SOT-89
Absolute Maximum Ratings Ta=25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current at
Base current
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
IB
Collector Power Dissipation
PC(Note 1)
Characteristics at Ta = 25
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Symbol
ICBO
IEBO
V(BR)CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
ton
Min.
-
-
-50
70
20
-
-
-
-
-
Switching time
Storage time
tstg
-
Fall time
tf
-
Classification Of hFE1
Rank
O
Range
70-140
Y
120-240
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5 TYP.
0.70 REF.
Typ.
-
-
-
-
-
-
120
40
0.1
1.0
Ratings
+150
-55 ~ +150
-50
-50
-5
-2
-0.4
500
1000
Unit
V
V
V
A
A
mW
mW
Note 1:Mounted on ceramic substrate (250mm2x0.8t)
Max.
-0.1
-0.1
-
240
-
-0.5
-1.2
-
-
Unit
uA
uA
V
V
V
MHz
Pf
Test Conditions
VCB=-50V,IE=0
VEB=-5V,Ic=0
IC=-10mA,IB=0
VCE=-2V,Ic=-0.5A
VCE=-2V,Ic=-2.0A
IC=-1A, IB=-0.05A
IC=-1A, IB=-0.05A
VCE=-2V, IC=-0.5A
VCB=-10V,IE=0, f=1MHz
-s
-s
0.1 -
s
GM1213
Page: 1/2
1 page | ||
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