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GTM |
www.DataSheet4U.com
CORPORATION ISSUED DATE :2005/10/06
REVISED DATE :
GL195
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Description
The GL195 is designed for medium power amplifier applications.
Features
-60 Volt VCEO
1 Amp continuous current
Complementary to GL194
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Base Current
IB
Total Power Dissipation
PD
Ratings
+150
-55~+150
-80
-60
-5
-1
-2
-200
2
Unit
V
V
V
A
A
mA
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
BVCBO
-80 -
*BVCEO
-60 -
BVEBO
-5 -
ICBO
--
ICES
--
IEBO
--
*VCE(sat)1
--
*VCE(sat)2
--
*VBE(sat)
--
*VBE(on)
--
*hFE1
100 -
*hFE2
100 -
*hFE3
80 -
*hFE4
15 -
fT 150 -
Cob - -
, unless otherwise stated)
Max.
Unit
Test Conditions
- V IC=-100uA , IE=0
- V IC=-10mA, IB=0
- V IE=-100uA ,IC=0
-100
nA VCB=-60V, IE=0
-100
nA VCES=-60V
-100
nA VEB=-4V, IC=0
-0.3 V IC=-500mA, IB=-50mA
-0.6 V IC=-1A, IB=-100mA
-1.2 V IC=-1A, IB=-100mA
-1.0 V VCE=-5V, IC=-1A
VCE=-5V, IC=-1mA
300 VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-2A
- MHz VCE=-10V, IC=-50mA, f=100MHz
10 pF VCB=-10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle 2%
GL195
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Characteristics Curve
CORPORATION ISSUED DATE :2005/10/06
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GL195
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