파트넘버.co.kr GJ5706 데이터시트 PDF


GJ5706 반도체 회로 부품 판매점

NPN HIGH SPEED SWITCHING TRANSISTOR



GTM 로고
GTM
GJ5706 데이터시트, 핀배열, 회로
www.DataSheet4U.com
ISSUED DATE :2005/05/06
REVISED DATE :
GJ5706
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GJ5706 is designed high current switching applications.
Features
*Large current capacitance
*Low collector-to-emitter saturation voltage
*High-speed switching
*High allowable power dissipation
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Absolute Maximum Ratings (Ta = 25 , unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
80
Collector to Emitter Voltage
VCES
80
Collector to Emitter Voltage
VCEO
50
Emitter to Base Voltage
VEBO
6
Collector Current
IC 5
Collector Current(Pulse)
ICP 7.5
Base Current
IB 1.2
Junction Temperature
Tj +150
Storage Temperature
TsTG
-55 ~ +150
Total Power Dissipation
PD
PD(TC=25 )
0.8
15
Electrical Characteristics (Rating at Ta=25 )
Symbol
Min.
Typ.
Max.
BVCBO
80 -
-
BVCES
BVCEO
BVEBO
80 -
50 -
6-
-
-
-
ICBO
IEBO
*VCE(sat)1
- -1
- -1
- - 135
*VCE(sat)2
*VBE(sat)
*hFE
- - 240
- - 1.2
200 - 560
fT - 400 -
Cob - 15 -
ton (Turn-On Time)
-
35
-
tstg (Storage Time)
-
300
-
tf (Fall Time)
- 20 -
Unit
V
V
V
V
uA
uA
mV
mV
V
MHz
pF
ns
ns
ns
Test Conditions
IC=10uA, IE=0
IC=100uA, RBE=0
IC=1mA, RBE=
IE=10uA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
lC=1A, IB=50mA
lC=2A, IB=100mA
lC=2A, IB=100mA
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
See specified test circuit.
See specified test circuit.
See specified test circuit.
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Unit
V
V
V
V
A
A
A
W
W
GJ5706
Page: 1/3


GJ5706 데이터시트, 핀배열, 회로
Switching Time Test Circuit
Characteristics Curve
ISSUED DATE :2005/05/06
REVISED DATE :
GJ5706
Page: 2/3




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GJ5706 transistor

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NPN HIGH SPEED SWITCHING TRANSISTOR - GTM