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GJ3669 반도체 회로 부품 판매점

PNP EPITAXIAL PLANAR TRANSISTOR



GTM 로고
GTM
GJ3669 데이터시트, 핀배열, 회로
www.DataSheet4U.com
ISSUED DATE :2005/08/31
REVISED DATE :2005/11/28B
GJ3669
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GJ3669 is designed for using in power amplifier applications, power switching applications.
Package Dimensions
TO-252
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Total Device Dissipation (TA=25 )
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
80
80
5
2
1.25
150
-55 ~ +150
Unit
V
V
V
A
W
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
80 - - V IC=100uA, IE=0
BVCEO
80 - - V IC=10mA, IB=0
BVEBO
5 - - V IE=100uA, IC=0
ICBO
IEBO
- - 1 uA VCB=80V, IE=0
- - 1 uA VEB=5V, IC=0
*VCE(sat)
- 0.15 0.5 V IC=1A, IB=50mA
*VBE(sat)
- 0.9 1.2 V IC=1A, IB=50mA
*hFE1
*hFE2
70 - 240
40 -
-
VCE=2V, IC=0.5A
VCE=2V, IC=1.5A
fT - 100 - MHz VCE=2V, IE=500mA, f=100MHz
Cob - 30 - pF VCB=10V, IE=0, f=1MHz
ton (Turn-On Time)
tstg (Storage Time)
tf (Fall Time)
-
-
-
0.2 -
1.0 -
0.2 -
us VCC=30V, RL=30 ,
us
IC=1A,
IB1=-IB2=50mA,
us Duty Cycle 1%
*Pulse Test: Pulse Width 380 s, Duty Cycle
Classification Of hFE1
Rank
Range
O
70 ~ 140
Y
120 ~ 240
2%
GJ3669
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GJ3669 데이터시트, 핀배열, 회로
Characteristics Curve
ISSUED DATE :2005/08/31
REVISED DATE :2005/11/28B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ3669
Page: 2/2




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PNP EPITAXIAL PLANAR TRANSISTOR - GTM