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GJ1386 반도체 회로 부품 판매점

PNP EPITAXIAL SILICON TRANSISTOR



GTM 로고
GTM
GJ1386 데이터시트, 핀배열, 회로
www.DataSheet4U.com
ISSUED DATE :2005/07/25
REVISED DATE :
GJ1386
PNP EPITAXIAL SILICON TRANSISTOR
Description
The GJ1386 is designed for low frequency applications.
Features
Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A)
Excellent DC current gain characteristics
Package Dimensions
TO-252
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
*Collector Current (Pulse)
IC
Total Power Dissipation (TC=25 )
PD
Electrical Characteristics (Ta = 25 )
Symbol
Min. Typ. Max.
BVCBO
BVCEO
-30 -
-20 -
-
-
BVEBO
ICBO
-6 -
-
- - -500
IEBO
- - -500
*VCE(sat)
- - -1
*hFE
82 - 580
fT - 120 -
Cob - 60 -
Unit
V
V
V
nA
nA
V
MHz
pF
Classification Of hFE
Rank
P
Range
82 - 180
Q
120 - 270
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
+150
-55~+150
-30
-20
-6
-5
-10
20
Unit
V
V
V
A
A
W
Test Conditions
IC=-50uA , IE=0
IC=-1mA, IB=0
IE=-50uA ,IC=0
VCB=-20V, IE=0
VEB=-5V, IC=0
IC=-4A, IB=-0.1A
VCE=-2V, IC=-0.5A
VCE=-6V, IE=50mA, f=30MHz
VCB=-20V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
R
180 - 390
E
370 - 580
GJ1386
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GJ1386 데이터시트, 핀배열, 회로
Characteristics Curve
ISSUED DATE :2005/07/25
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ1386
Page: 2/2




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PNP EPITAXIAL SILICON TRANSISTOR - GTM