파트넘버.co.kr GI4672 데이터시트 PDF


GI4672 반도체 회로 부품 판매점

NPN EPITAXIAL SILICON TRANSISTOR



GTM 로고
GTM
GI4672 데이터시트, 핀배열, 회로
www.DataSheet4U.com
ISSUED DATE :2005/07/15
REVISED DATE :
GI4672
NPN EPITAXIAL SILICON TRANSISTOR
Description
The GI4672 is designed for low frequency amplifier applications.
Features
Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA
Excellent DC current gain characteristics
Package Dimensions
TO-251
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse PW=10ms)
IC
Total Device Dissipation (TA=25 )
PD
Total Device Dissipation (TC=25 )
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Ratings
60
50
6
2
5
1.5
10
150
-55 ~ +150
Unit
V
V
V
A
A
W
W
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
60 - - V IC=50uA, IE=0
BVCEO
50 - - V IC=1mA, IB=0
BVEBO
6 - - V IE=50uA, IC=0
ICBO
IEBO
- - 100 nA VCB=60V, IE=0
- - 100 nA VEB=5V, IC=0
*VCE(sat)
-
0.1 0.35
V IC=1A, IB=50mA
*hFE
120 - 400
VCE=2V, IC=500mA
fT - 210 - MHz VCE=2V, IE=500mA, f=100MHz
Cob - 25 - pF VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380 s, Duty Cycle
Classification Of hFE
Rank
Range
A
120 ~ 240
B
200 ~ 400
2%
GI4672
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GI4672 데이터시트, 핀배열, 회로
Characteristics Curve
ISSUED DATE :2005/07/15
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GI4672
Page: 2/2




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NPN EPITAXIAL SILICON TRANSISTOR - GTM