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BLF2022-40 반도체 회로 부품 판매점

UHF power LDMOS transistor



NXP Semiconductors 로고
NXP Semiconductors
BLF2022-40 데이터시트, 핀배열, 회로
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D750
BLF2022-40
UHF power LDMOS transistor
Preliminary specification
2001 April 05


BLF2022-40 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Philips Semiconductors
UHF power LDMOS transistor
Preliminary specification
BLF2022-40
FEATURES
High power gain
Easy power control
Excellent ruggedness
Designed for broadband operation (2.0 to 2.2 GHz)
Internal input and output matching for high gain and
efficiency
Improved linearity at backoff levels.
PINNING
PIN
1
2
3
APPLICATIONS
Common source class-AB operation for PCN and PCS
applications in the 2000 to 2200 MHz frequency range
Suitable for GSM, Edge, CDMA and WCDMA
applications.
DESCRIPTION
drain
gate
source, connected to flange
1
Top view
2
3
MBL290
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT608A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
Fig.1 Simplified outline SOT608A.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
PL
Gp
ηD
dim
(V) (W) (dB) (%) (dBc)
Two-tone, class-AB
f1 = 2170; f2 = 2170.1
28 40 (PEP) >10.5 >30 ≤−25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS drain-source voltage
VGS gate-source voltage
ID DC drain current
Tstg storage temperature
Tj junction temperature
MIN.
65
MAX.
65
±15
5
+150
200
UNIT
V
V
A
°C
°C
2001 April 05
2




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UHF power LDMOS transistor - NXP Semiconductors