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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D750
BLF2022-40
UHF power LDMOS transistor
Preliminary specification
2001 April 05
www.DataSheet4U.com
Philips Semiconductors
UHF power LDMOS transistor
Preliminary specification
BLF2022-40
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Designed for broadband operation (2.0 to 2.2 GHz)
• Internal input and output matching for high gain and
efficiency
• Improved linearity at backoff levels.
PINNING
PIN
1
2
3
APPLICATIONS
• Common source class-AB operation for PCN and PCS
applications in the 2000 to 2200 MHz frequency range
• Suitable for GSM, Edge, CDMA and WCDMA
applications.
DESCRIPTION
drain
gate
source, connected to flange
1
Top view
2
3
MBL290
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT608A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
Fig.1 Simplified outline SOT608A.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
PL
Gp
ηD
dim
(V) (W) (dB) (%) (dBc)
Two-tone, class-AB
f1 = 2170; f2 = 2170.1
28 40 (PEP) >10.5 >30 ≤−25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS drain-source voltage
VGS gate-source voltage
ID DC drain current
Tstg storage temperature
Tj junction temperature
MIN.
−
−
−
−65
−
MAX.
65
±15
5
+150
200
UNIT
V
V
A
°C
°C
2001 April 05
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