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BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
Rev. 08 — 26 October 2005
Product data sheet
1. Product profile
CAUTION
1.1 General description
200 W LDMOS avionics power transistor for transmitter applications at frequencies from
1030 MHz to 1090 MHz.
Table 1: Typical performance
RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA; typical
values.
Mode of operation
Conditions
VDS PL Gp ηD tr
tf
(V) (W) (dB) (%) (ns) (ns)
Pulsed class-AB:
tp = 50 µs; δ = 2 %
36 200 15 50 35 6
1030 MHz to 1090 MHz tp = 128 µs; δ = 2 % 36 250 14 50 35 6
tp = 340 µs; δ = 1 % 36 250 14 50 35 6
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a
supply voltage of 36 V and an IDq of 150 mA:
x Load power ≥ 200 W
x Gain ≥ 13 dB
x Efficiency ≥ 45 %
x Rise time ≤ 50 ns
x Fall time ≤ 50 ns
s High power gain
s Easy power control
s Excellent ruggedness
s Source on mounting flange eliminates DC isolators, reducing common mode
inductance
1.3 Applications
s Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.
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Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
2. Pinning information
Table 2: Pinning
Pin Description
BLA1011-200 (SOT502A)
1 drain
2 gate
3 source
BLA1011S-200 (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange
3. Ordering information
Simplified outline Symbol
11
3
[1] 2
23
sym039
1
3
[1]
2
1
2
3
sym039
Table 3: Ordering information
Type number Package
Name Description
BLA1011-200 -
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
BLA1011S-200 -
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
4. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Ptot total power dissipation Th ≤ 25 °C; tp = 50 µs; δ = 2 %
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 75 V
- ±22 V
- 700 W
−65 +150 °C
- 200 °C
9397 750 14634
Product data sheet
Rev. 08 — 26 October 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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