MSA1022-CT1 반도체 회로 부품 판매점
PNP RF Amplifier Transistor Surface Mount
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 ETL |
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PNP RF Amplifier Transistor
Surface Mount
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS (T A = 25 °C)
Rating
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
V CBO
V CEO
V EBO
IC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
T stg
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Characteristic
Collector Cutoff Current
(V CB = –10 Vdc, I E = 0)
Collector-Emitter Breakdown Voltage
(V CE = –20 Vdc, I B = 0)
Emitter-Base Breakdown Voltage
(V EB = –5.0 Vdc, I C = 0)
DC Current Gain (1)
(V CE = –10 Vdc, I C = –1.0 mAdc)
Current-Gain - Bandwidth Product
(V CB = –10 Vdc, I E = 1.0 mAdc)
1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%.
Value
–30
–20
–5.0
–30
Max
200
150
-55 ~ +150
Symbo
I CBO
I CEO
I EBO
h FE
fT
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C
°C
lMin
—
—
—
110
150
DEVICE MARKING
MSA1022–CT1
3
1
2
CASE 318D–03, STYLE1
SC–59
Max
–0.1
–100
–10
220
—
Unit
µAdc
µAdc
µAdc
—
MHz
Marking Symbol
ECX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N1–1/1
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제조업체: ETL
( etl )
MSA1022-CT1 transistor
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[ MSA1022-CT1.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
관련 데이터시트
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