BFP540FESD 반도체 회로 부품 판매점
Low Noise Silicon Bipolar RF Transistor
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 Infineon Technologies |
Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier
• Excellent ESD performance
typical value 1000 V (HBM)
• Outstanding Gms = 20 dB
Minimum noise figure NFmin = 0.9 dB
• Pb-free (ROHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
BFP540FESD
3
2
4
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP540FESD
Marking
Pin Configuration
AUs 1=B 2=E 3=C 4=E -
-
Package
TSFP-4
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
TA = 25 °C
TA = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 80 °C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
1TS is measured on the emitter lead at the soldering point to the pcb
Value
4.5
4
10
10
1
80
8
250
150
-55 ... 150
Unit
V
mA
mW
°C
1 2013-09-05
BFP540FESD
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
280
Unit
K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 10 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 20 mA, VCE = 3.5 V, pulse measured
V(BR)CEO 4.5
5
-V
ICES
- - 10 µA
ICBO
- - 100 nA
IEBO
- - 10 µA
hFE 50 110 170 -
1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
2 2013-09-05
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제조업체: Infineon Technologies
( infineon )
BFP540FESD transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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