BC847BVN 반도체 회로 부품 판매점
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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 Diodes Incorporated |
BC847BVN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Die Construction
• Two Internally Isolated NPN/PNP Transistors in One Package
• Ultra-Small Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
Mechanical Data
• Case: SOT563
• Case Material: Molded Plastic, “Green” Molding Compound.
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.003 grams (Approximate)
SOT563
Top View
Bottom View
C1 B2 E2
Q1 Q2
E1 B1 C2
Device Schematic
Top View
Ordering Information (Notes 4 & 5)
Part Number
BC847BVN-7
BC847BVNQ-7
Compliance
AEC-Q101
Automotive
Marking
KAW
KAW
Reel Size (inches)
7
7
Tape Width (mm)
8
8
Quantity per Reel
3,000
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT563
KAW YM
KAW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb Mar
23
2012
Z
Apr
4
2013
A
May
5
Jun
6
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
BC847BVN
Document number: DS30627 Rev. 7 - 2
1 of 6
www.diodes.com
March 2015
© Diodes Incorporated
BC847BVN
Maximum Ratings: NPN, BC847B Type (Q1) (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IEM
Value
50
45
6
100
200
200
Unit
V
V
V
mA
mA
mA
Maximum Ratings: PNP, BC857B Type (Q2) (@TA = +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IEM
Value
-50
-45
-6
-100
-200
-200
Unit
V
V
V
mA
mA
mA
Thermal Characteristics – Total Device (@TA = +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 6) Total Device
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
150
833
-65 to +150
Unit
mW
°C/W
°C
Note:
6. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
Electrical Characteristics: NPN, BC847B Type (Q1) (@TA = +25°C unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Symbol Min
Typ
Max
Unit
Test Condition
BVCBO
50
—
—
V IC = 100µA, IB = 0
BVCEO
45
—
—
V IC = 10mA, IB = 0
BVEBO
6
—
—
V IE = 100µA, IC = 0
hFE 200 290 450
— VCE = 5.0V, IC = 2.0mA
VCE(sat)
—
90
200
250
600
mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VBE(sat)
—
700
900
—
mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VBE(on)
580
—
660
—
700
720
mV VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
ICBO
—
—
—
—
15 nA VCB = 30V
5.0 µA VCB = 30V, TA = +150°C
fT
100 300
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
CCBO
—
3.5
6.0
pF VCB = 10V, f = 1.0MHz
Note:
7. Short duration pulse test used to minimize self-heating effect.
BC847BVN
Document number: DS30627 Rev. 7 - 2
2 of 6
www.diodes.com
March 2015
© Diodes Incorporated
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BC847BVN transistor
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