|
Diodes Incorporated |
Features
• Ideally Suited for Automatic Insertion
• Epitaxial Planar Die Construction
• Complementary PNP Types: BC807-xxW
• For switching and AF Amplifier Applications
• Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
• Halogen and Antimony Free. "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
BC817-16W/-25W/-40W
45V NPN SMALL SIGNAL TRANSISTOR IN SOT23
Mechanical Data
• Case: SOT323
• Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight 0.006 grams (approximate)
SOT323
C
B
Top View
E
Device Symbol
Top View
Pin-Out
Ordering Information (Note 4)
Product
BC817-16W-7
BC817-25W-7
BC817-40W-7
Marking
K6A
K6B
K6C
Reel size (inches)
7
7
7
Tape width (mm)
8
8
8
Quantity per reel
3,000
3,000
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
xxx
xxx = Product Type Marking Code
(Please see Ordering Information)
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb Mar
23
2012
Z
Apr
4
2013
A
May Jun
56
2014
B
Jul
7
2015
C
Aug Sep
89
2016
D
Oct
O
2017
E
Nov Dec
ND
BC817-16W/-25W/-40W
Document Number: DS30575 Rev. 5 - 2
1 of 5
www.diodes.com
Jan 2014
© Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 5)
Symbol
PD
RθJA
TJ,TSTG
BC817-16W/-25W/-40W
Value
50
45
5
500
1.0
200
Unit
V
V
V
mA
A
mA
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
ESD Ratings (Note 6)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V 3A
VC
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
BC817-16W
BC817-25W
DC Current Gain (Note 7)
BC817-40W
BC817-16W
BC817-25W
BC817-40W
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Voltage (Note 7)
Gain Bandwidth Product
Collector-Base Capacitance
Symbol
BVCEO
BVEBO
ICES
ICBO
IEBO
hFE
VCE(SAT)
VBE
fT
CCBO
Min
45
5
—
—
—
100
160
250
60
100
170
—
—
100
—
Typ Max Unit
Test Condition
— — V IC = 10mA
— — V IC = 100µA
—
100
5.0
nA VCE = 45V
µA VCE = 25V, TJ = +150°C
—
100
5.0
nA VCE = 20V
µA VCE = 20V, TJ = +150°C
— 100 nA VEB = 5V
250
400 IC = 100mA, VCE = 1.0V
600
——
— IC = 300mA, VCE = 1.0V
— 700 mV IC = 500mA, IB = 50mA
—
1200
mV IC = 300mA, VCE = 1.0V
—
—
MHz
VCE = 5.0V, IC = 10mA,
f = 50MHz
— 12 pF VCB = 10V, f = 1.0MHz
Notes:
5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
BC817-16W/-25W/-40W
Document Number: DS30575 Rev. 5 - 2
2 of 5
www.diodes.com
Jan 2014
© Diodes Incorporated
|