파트넘버.co.kr NJ450L 데이터시트 PDF


NJ450L 반도체 회로 부품 판매점

Silicon Junction Field-Effect Transistor



InterFET 로고
InterFET
NJ450L 데이터시트, 핀배열, 회로
F-38
NJ450L Process
Silicon Junction Field-Effect Transistor
¥ Low-Current
¥ Low Gate Leakage Current
¥ High Input Impedance
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ450L Process.
Datasheet
2N6550
IF4500
IF4501
IFN860
01/99
G
S-D
S-D
G
Die Size = 0.028" X 0.028"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
www.DataSheet4U.com
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ450L Process
Min Typ Max Unit
Test Conditions
V(BR)GSS
IGSS
IDSS
VGS(OFF)
– 25
5
– 0.1
– 25
– 50
–4
V IG = – 1 µA, VDS = ØV
pA VGS = – 15V, VDS = ØV
mA VDS = 15V, VGS = ØV
V VDS = 15V, ID = 1 nA
gfs
100
mS VDS = 15V, VGS = ØV
f = 1 kHz
Ciss
35
pF VDS = ØV, VGS = – 10V
f = 1 MHz
Crss
10
pF VDS = ØV, VGS = – 10V
f = 1 MHz
N
0.9 nV/HZ VDG = 4V, ID = 5 mA
f = 1 kHz
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(972) 487-1287 FAX (972) 276-3375
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NJ450L 데이터시트, 핀배열, 회로
01/99
F-39
NJ450L Process
Silicon Junction Field-Effect Transistor
150
125
100
75
50
0
Drain Current as a Function of VDS
VGS(OFF) = Ð2.2 V
VGS = Ø V
VGS = – 0.5 V
VGS = –1.0 V
VGS = –1.5 V
VGS = –2.0 V
5 10 15
Drain to Source Voltage in Volts
20
Drain Saturation Current as a Function of VGS(OFF)
500
400
300
200
100
0 –1 –2 –3 –4 –5 –6
Drain Source Cutoff Voltage in Volts
Noise as a Function of Frequency
4.0
IDSS = 35 mA
3.0 VDG = 4 V
ID = 5 mA
2.0
1.0
10 100 1K 10K 100K
Frequency in Hz
Gfs as a Function of VGS(OFF)
150
100
50
0 – 0.5 – 1.0 – 1.5 – 2.0 – 2.5 – 3.0
Gate Source Cutoff Voltage in Volts
Gfs as a Function of IDSS
120
100
80
60
40
20
0 50 100 150 200 250 300
Drain Saturation Current in mA
100
80
60
40
20
0
Capacitance as a Function of VGS
VDS = Ø
Ciss
Crss
– 4 – 8 – 12
Gate Source Voltage in Volts
– 16




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NJ450L transistor

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