파트넘버.co.kr NJ42 데이터시트 PDF


NJ42 반도체 회로 부품 판매점

Silicon Junction Field-Effect Transistor



INTERFET 로고
INTERFET
NJ42 데이터시트, 핀배열, 회로
F-24
NJ42 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier
¥ High Breakdown Voltage
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ42 Process.
Datasheet
2N6449, 2N6450
IFN6449, IFN6450
www.DataSheet4U.com
01/99
S
D
S
Die Size = 0.032" X 0.032"
All Bond Pads = 0.004", Dia.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
V(BR)GSS
IGSS
IDSS
VGS(OFF)
Min
– 300
2
–2
Typ
– 400
–1
Max
– 10
10
– 12
NJ42 Process
Unit Test Conditions
V IG = 1 µA, VDS = ØV
nA VGS = – 150V, VDS = ØV
mA VDS = 30V, VGS = ØV
V VDS = 30V, ID = 1 nA
gfs
800
µS VDS = 30V, VGS = ØV
f = 1 kHz
Ciss
6 10 pF VDS = 30V, VGS = ØV
f = 1 MHz
Crss
2 5 pF VDS = 30V, VGS = ØV
f = 1 MHz
N 10 nV/HZ VDS = 15V, VGS = ØV f = 1 kHz
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NJ42 데이터시트, 핀배열, 회로
01/99
F-25
NJ42 Process
Silicon Junction Field-Effect Transistor
3.0
2.0
1.0
0
Drain Current as a Function of VDS
VGS(OFF) = Ð4.2 V
VGS = Ø V
VGS = –1 V
VGS = –2 V
VGS = –3 V
VGS = –4 V
5 10 15
Drain to Source Voltage in Volts
20
Drain Saturation Current as a Function of VGS(OFF)
8
6
4
2
– 2 – 4 – 6 – 8 – 10
Gate Source Cutoff Voltage in Volts
Output Admittance as a Function of VGS
1.0
0.8
0.6 IDSS = 5.5 mA
0.4
IDSS = 2.5 mA
0.2
0 10 20 30 40 50
Drain Source Voltage in Volts
Gfs as a Function of VGS(OFF)
1.2
1.0
0.8
0.6
0.4
0.2
2 4 6 8 10 12
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of Temperature
16
12 IDSS
= 9 mA
VDS = 150 V
VDS = 30 V
8
IDSS
= 5.5 mA
4
IDSS
= 2.5 mA
– 75 – 25
0
75 125
Free Air Temperature in °C
175
Capacitance as a Function of VGS
10
VDS = 30 V
8 VDS = 50 V
6
4
2
– 0.1
– 1 – 10 – 20
Gate Source Voltage in Volts




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NJ42 transistor

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