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PDF NJ3600L Data sheet ( Hoja de datos )
| Número de pieza | NJ3600L | |
| Descripción | Silicon Junction Field-Effect Transistor Large Capacitance Detector Pre-Amplifier | |
| Fabricantes | InterFET | |
| Logotipo |  |
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F-48
NJ3600L Process
Silicon Junction Field-Effect Transistor
¥ Large Capacitance Detector Pre-Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Device in this Databook based on the NJ3600L Process.
Datasheet
IF3601
IF3602
01/99
S-D S-D S-D G
G D-S D-S
Die Size = 0.074" X 0.074"
All Bond Pads ≥ 0.004" Sq.
Substrate is also Gate.
D-S
www.DataSheet4U.com
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance (Pulsed)
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ3600L Process
Min Typ Max Unit
Test Conditions
V(BR)GSS
IGSS
IDSS
VGS(OFF)
– 15 – 22
100 1000
50 1000
– 0.5 – 3
V IG = 1 µA, VDS = ØV
pA VGS = 10V, VDS = ØV
mA VDS = 10V, VGS = ØV
V VDS = 10V, ID = 1 nA
rds(on)
gfs
Ciss
Crss
e¯N
1 4 Ω ID = 1 mA, VGS = ØV
750 mS VDS = 10V, VGS = ØV
650 pF VDS = 10V, VGS = ØV
80 pF VDS = 10V, VGS = ØV
0.35 nV/√HZ VDG = 3V, ID = 5 mA
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 30 Hz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
1 page | ||
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| PDF Descargar | [ Datasheet NJ3600L.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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