파트넘버.co.kr NJ14AL 데이터시트 PDF


NJ14AL 반도체 회로 부품 판매점

Silicon Junction Field-Effect Transistor



InterFET 로고
InterFET
NJ14AL 데이터시트, 핀배열, 회로
F-4
NJ14AL Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
¥ Rf AMP to 1.0 Ghz
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ14AL Process.
Datasheet
IF140, IF140A
IF142
www.DataSheet4U.com
01/99
G
S-D
S-D
G
Die Size = 0.016" X 0.016"
All Round Bond Pads = 0.0028"
All Square Bond Pads = 0.004"
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V(BR)GSS
IGSS
VGS(OFF)
IDSS
Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs
Common Source Input Capacitance
Ciss
Common Source Reverse Transfer Capacitance Crss
Equivalent Noise Voltage
N
Min
– 15
– 0.5
0.5
Typ
– 22
– 2.0
10
Max
– 100
–7
20
NJ14AL Process
Unit Test Conditions
V IG = – 1 µA, VDS = ØV
pA VGS = – 10V, VDS = ØV
V VGS = 10V, ID = 1 nA
mA VDS = 10V, VGS = ØV
5.5
mS VDS = 10V, VGS = ØV
f = 1 kHz
2.3
pF VDS = 15V, VGS = ØV
f = 1 MHz
0.5
pF VDS = 15V, VGS = ØV
f = 1 MHz
4
nV/HZ VDS = 10V, ID = 5 mA
f = 1 kHz
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NJ14AL 데이터시트, 핀배열, 회로
01/99
F-5
NJ14AL Process
Silicon Junction Field-Effect Transistor
10
8
6
4
2
0
Drain Current as a Function of VDS
VGS(OFF) = Ð2.2 V
Vgs = Ø V
Vgs = – 0.5 V
Vgs = –1.0 V
Vgs = –1.5 V
Vgs = –2.0 V
5 10 15
Drain to Source Voltage in Volts
20
Drain Saturation Current as a Function of VGS(OFF)
25
20
15
10
5
0 –1 –2 –3 –4 –5 –6
Gate Source Cutoff Voltage in Volts
Noise as a Function of Temperature
8
f = 1 kHz
6
f = 100 kHz
4
2
100 150 200 250 300 350
Temperature (K)
Gfs as a Function of VGS(OFF)
10
8
6
4
2
0 –1 –2 –3 –4 –5 –6
Gate Source Cutoff Voltage in Volts
Noise as a Function of Frequency
6
4
VDG = 4 V
ID = 5 mA
2
10 100 1K 10K 100K
Frequency in Hz
Input Capacitance as a Function of VGS
3.5
3.0
VDS = Ø V
2.5
VDS = 5 V
2.0
1.5
0 – 4 – 8 – 12 – 16
Gate Source Voltage in Volts




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NJ14AL transistor

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