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INTERFET |
F-32
NJ132 Process
Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ132 Process.
Datasheet
2N4391, 2N4392
2N4393
2N4856, 2N4857
2N4858, 2N4859
2N4860, 2N4861
2N4856A, 2N4857A
2N4858A, 2N4859A
Datasheet
2SK113
IFN113
2N4860A, 2N4861A
J111, J112
J113
www.DataSheet4U.com
01/99
G
S-D
S-D
G
Die Size = 0.022" X 0.022"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
NJ132 Process
Min Typ Max Unit
Test Conditions
V(BR)GSS – 30 – 45
V IG = – 1 µA, VDS = ØV
IGSS – 10 – 100 pA VGS = – 20V, VDS = ØV
IDSS 10
150 mA VDS = 20V, VGS = ØV
VGS(OFF) – 0.5
– 7 V VDS = 20V, ID = 1 nA
rds(on)
Ciss
Ciss
td(on)
tr
td(off)
25
Ω ID = 1 mA, VGSS = ØV
f = 1 kHz
12
pF VDS = 20V, VGS = ØV
f = 1 MHz
2.5
pF VDS = ØV, VGS = – 10V
f = 1 MHz
6 ns VDD = – 10V, ID = 10 mA
5 ns RL = 10V, VGS(ON) = ØV
50 ns VGS(OFF) = – 6V
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
01/99
F-33
NJ132 Process
Silicon Junction Field-Effect Transistor
100
80
60
40
20
0
Drain Current as a Function of VDS
VGS(OFF) = Ð4.5 V
VGS = Ø V
VGS = –1 V
VGS = –2 V
VGS = –3 V
VGS = –4 V
5 10 15
Drain to Source Voltage in Volts
20
Drain Saturation Current as a Function of VGS(OFF)
150
100
50
0 –1 –2 –3 –4 –5 –6 –7
Drain Source Cutoff Voltage in Volts
Input Capacitance as a Function of VGS
20
VDS = Ø V
16
VDS = 15 V
12
8
4
0 – 4 – 8 – 12 – 16 – 20
Gate Source Voltage in Volts
Gfs as a Function of VGS(OFF)
40
30
20
10
0 –2 –4 –6 –8
Gate Source Cutoff Voltage in Volts
IDSS as a Function of RDS
60
50
40
30
20
10
0
20 40 60 80 100 120 140
Drain Saturation Current in mA
Feedback Capacitance as a Function of VGS
20
16
12
8
VDS = Ø V
4
0 – 4 – 8 – 12 – 16 – 20
Gate Source Voltage in Volts
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