파트넘버.co.kr BFR93 데이터시트 PDF


BFR93 반도체 회로 부품 판매점

Silicon NPN Planar RF Transistor



TEMIC Semiconductors 로고
TEMIC Semiconductors
BFR93 데이터시트, 핀배열, 회로
Silicon NPN Planar RF Transistor
BFR93/BFR93R
Applications
RF-amplifier up to GHz range specially for wide band antenna amplifier.
Features
D High power gain
D Low noise figure
D High transition frequency
1
1
23
94 9280
BFR93 Marking: R1
Plastic case (SOT 23)
1= Collector; 2= Base; 3= Emitter
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation Tamb 60°C
Junction temperature
Storage temperature range
Maximum Thermal Resistance
Junction ambient
Parameters
32
95 10527
BFR93R Marking: R4
Plastic case (SOT 23)
1= Collector; 2= Base; 3= Emitter
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
20
12
2
40
200
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Symbol
RthJA
Value
450
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
1 (5)


BFR93 데이터시트, 핀배열, 회로
BFR93/BFR93R
Electrical DC Characteristics
Tj = 25°C, unless otherwise specified
Parameters / Test Conditions
Collector-emitter cut-off current
VCE = 20 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 2 V, IC = 0
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
DC forward current transfer ratio
VCE = 5 V, IC = 30 mA
Symbol Min. Typ. Max. Unit
ICES 100 m A
ICBO
IEBO
100 nA
10 m A
V(BR)CEO
12
V
hFE 25 50 150
Electrical AC Characteristics
Tamb = 25°C
Parameters / Test Conditions
Symbol Min. Typ. Max. Unit
Transition frequency
VCE = 5 V, IC = 30 mA, f = 500 MHz
Collector-emitter capacitance
VCE = 5 V, f = 1 MHz
Collector base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
VCE = 5 V, IC = 4 mA, ZS = 50 W, f = 500 MHz
Power gain
VCE = 5 V, IC = 30 mA, ZL = ZLopt,
f = 500 MHz
f = 800 MHz
Linear output voltage – two tone intermodulation test
VCE = 5 V, IC = 30 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 W
Third order intercept point
VCE = 5 V, IC = 30 mA, f = 800 MHz
fT
Cce
Ccb
Ceb
F
Gpe
Gpe
V1 = V2
IP3
5
0.15
0.5
1.1
1.9
18
13
240
30
GHz
pF
pF
pF
dB
dB
dB
mV
dBm
2 (5) TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96




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BFR93 transistor

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