PN2369 반도체 회로 부품 판매점
NPN Switching Transistor
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 Fairchild Semiconductor |
MMBT2369 / PN2369
NPN Switching Transistor
• This device is designed for high speed saturated switching at
collector currents of 10mA to 100mA.
• Sourced from process 21.
February 2008
MMBT2369
PN2369
C
E
B SOT-23
Mark: 1J
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * Ta = 25×C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
ICP
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
**Collector Current (Pulse)
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Ratings
15
40
4.5
200
400
-55 ~ 150
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”.
Max.
350
2.8
125
357
Units
V
V
V
mA
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 2007 Fairchild Semiconductor Corporation
MMBT2369 / PN2369 Rev. 1.0.0
1
www.fairchildsemi.com
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
IC = 10mA, IB = 0
IC = 10μA, VBE = 0
IC = 10μA, IE = 0
IE = 10μA, IC = 0
VCB = 20V, IE = 0
VCB = 20V, IE = 0, Ta = 125°C
hFE DC Current Gain *
VCE(sat)
Collector-Emitter Saturation Voltage *
VBE(sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 2.0V
IC = 10mA, IB = 1.0mA
IC = 10mA, IB = 1.0mA
Cobo
Cibo
hfe
Output Capacitance
Input Capacitance
Small -Signal Current Gain
VCB = 5.0V, IE = 0, f = 1.0MHz
VEB = 0.5V, IC = 0, f = 1.0MHz
IC = 10mA, VCE = 10V, RG = 2.0kΩ,
f = 100MHz
Switching Characteristics
ts Storage Time
ton Turn-On Time
toff Turn-Off Time
IB1 = IB2 = IC = 10mA
VCC = 3.0V, IC = 10mA, IB1 = 3.0mA
VCC = 3.0V, IC = 10mA, IB1 = 3.0mA,
IB2 = 1.5mA
* Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
Min. Max. Units
15
40
40
4.5
0.4
30
V
V
V
V
μA
μA
40 120
20
0.25
0.7 0.85
V
V
4.0
5.0
5.0
pF
pF
13 ns
12 ns
18 ns
© 2007 Fairchild Semiconductor Corporation
MMBT2369 / PN2369 Rev. 1.0.0
2
www.fairchildsemi.com
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제조업체: Fairchild Semiconductor
( fairchild )
PN2369 transistor
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전화번호 : 051-319-2877
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