CEB21A3 반도체 회로 부품 판매점
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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 CET |
CEP21A3/CEB21A3
Nov. 2002
4 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4
FEATURES
30V , 20A , RDS(ON)=45mΩ @VGS=10V.
RDS(ON)=70mΩ @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
D
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
Operating and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
Ć20
20
60
20
43
0.29
-65 to 175
Unit
V
V
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RįJC
RįJA
4-167
3.5
62.5
C/W
C/W
CEP21A3/CEB21A3
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
4
Parameter
Symbol Condition
Min TypC Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICSa
BVDSS VGS = 0V, ID=250µA
30
IDSS VDS = 30V, VGS = 0V
IGSS VGS =Ć20V, VDS = 0V
V
1 µA
Ć100 nA
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS = VGS, ID = 250µA
VGS = 10V, ID = 12A
VGS = 4.5V, ID =15A
0.8
36
55
2.5 V
45 mΩ
70 mΩ
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICSb
ID(ON)
gFS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSb
Turn-On Delay Time
tD(ON)
Rise Time
tr
Turn-Off Delay Time
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 10V, VGS = 10V
VDS = 10V, ID = 12A
VDS =15V, VGS = 0V
f =1.0MHZ
VDD = 15V,
ID = 12A
VGS = 10V,
RGEN =2.5Ω
VDS = 15V,ID = 6A
VGS = 10V
20
20
A
S
364 PF
197 PF
62 PF
12 25 ns
5 15 ns
14 30 ns
14 30 ns
10 15 nC
2 nC
3 nC
4-168
4
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제조업체 : CET ( cet )
CEB21A3 transistor
데이터시트 다운로드 :
[ CEB21A3.PDF ]
[ CEB21A3 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
추천 데이터시트
CEB21A2
N-Channel Enhancement Mode Field Effect Transistor - CET
CEB21A3
N-Channel Logic Level Enhancement Mode Field Effect Transistor - CET
