파트넘버.co.kr CEB13N10 데이터시트 PDF


CEB13N10 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



CET 로고
CET
CEB13N10 데이터시트, 핀배열, 회로
CEP13N10/CEB13N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 12.8A, RDS(ON) = 180m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
100
±20
12.8
50
65
0.43
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.3
62.5
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2005.August
http://www.cetsemi.com
1


CEB13N10 데이터시트, 핀배열, 회로
CEP13N10/CEB13N10
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
100
1
100
-100
V
µA
nA
nA
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VDS = 10V, ID = 6A
2
4V
140 180 m
5S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
295
85
pF
pF
Crss 35 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 80, ID = 12.8A,
VGS = 10V, RGEN = 9.1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 12.8A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
10 20 ns
8 16 ns
17 35 ns
8 16 ns
12 16 nC
3.3 nC
5.3 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 12.8A
12.8 A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
4
2




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: CET

( cet )

CEB13N10 transistor

데이터시트 다운로드
:

[ CEB13N10.PDF ]

[ CEB13N10 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


CEB13N10

N-Channel Enhancement Mode Field Effect Transistor - CET



CEB13N10L

N-Channel Enhancement Mode Field Effect Transistor - CET