CEB13N07 반도체 회로 부품 판매점
N-Channel Enhancement Mode Field Effect Transistor
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 CET |
CEP13N07/CEB13N07
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
70V, 13A, RDS(ON) = 125mΩ @VGS = 10V.
RDS(ON) = 150mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
70
±20
13
52
45
0.3
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
EAS 85
IAS 11
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.35
62.5
Units
C/W
C/W
2004.November
4 - 54
http://www.cetsemi.com
CEP13N07/CEB13N07
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
70
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5.5A
VGS = 5V, ID = 5.5A
VDS = 25V, ID = 5.5A
1
1
100
-100
V
µA
nA
nA
2.5 V
97 125 mΩ
120 150 mΩ
5S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
413
105
pF
pF
Crss 23 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 6.8A,
VGS = 5V, RGEN = 25Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 48V, ID = 13.6A,
VGS = 5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
14 30 ns
10 25 ns
28 55 ns
9 20 ns
5.5 6.4 nC
2.1 nC
2.3 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 11A
11 A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 870µH, IAS = 11A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
4
4 - 55
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CEB13N07 transistor
데이터시트 다운로드 :
[ CEB13N07.PDF ]
[ CEB13N07 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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