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CEB12P10 반도체 회로 부품 판매점

P-Channel Enhancement Mode Field Effect Transistor



CET 로고
CET
CEB12P10 데이터시트, 핀배열, 회로
CEP12P10/CEB12P10
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-100V, -11A, RDS(ON) =315m@VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
-100
±30
-11
-44
75
0.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2
62.5
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2005.August
http://www.cetsemi.com
1


CEB12P10 데이터시트, 핀배열, 회로
CEP12P10/CEB12P10
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -100V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -5.75A
Forward Transconductance
Dynamic Characteristics d
gFS VDS = -40V, ID = -5.75A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -50V, ID = -11A,
VGS = -10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -80V, ID = -11A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -11A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-100
-2
Typ
260
3.5
625
140
45
15
12
31
31
15.6
3.6
6.0
Max Units
-1
100
-100
V
µA
nA
nA
-4 V
315 m
S
pF
pF
pF
30 ns
25 ns
60 ns
60 ns
20 nC
nC
nC
-11 A
-1.5 V
2




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P-Channel Enhancement Mode Field Effect Transistor - CET