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CEB1165 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



CET 로고
CET
CEB1165 데이터시트, 핀배열, 회로
CEP1165/CEB1165
CEF1165
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP1165
CEB1165
VDSS
600V
600V
CEF1165
600V
RDS(ON)
0.9
0.9
0.9
ID
10A
10A
10A e
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 600
VGS ±30
ID 10 10 e
IDM f
40 40 e
167 50
PD 1.33 0.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
2.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2006.Nov
http://www.cetsemi.com


CEB1165 데이터시트, 핀배열, 회로
CEP1165/CEB1165
CEF1165
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5A
Dynamic Characteristics c
Forward Transconductance
gFS VDS = 5V, ID = 10A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 10A,
VGS = 10V, RGEN = 10
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 10A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS g
VSD
VGS = 0V, IS = 10A g
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package IS(max) = 4.7A .
Min
600
2
Typ
0.75
6
1780
170
25
18
8
37
7
30
9.2
7.8
Max Units
10
100
-100
V
µA
nA
nA
4V
0.9
S
pF
pF
pF
36 ns
16 ns
64 ns
14 ns
38 nC
nC
nC
10 A
1.5 V
4
2




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CEB1165

N-Channel Enhancement Mode Field Effect Transistor - CET