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FJE5304D 반도체 회로 부품 판매점

NPN Triple Diffused Planar Silicon Transistor



Fairchild Semiconductor 로고
Fairchild Semiconductor
FJE5304D 데이터시트, 핀배열, 회로
FJE5304D
NPN Triple Diffused Planar Silicon Transistor
High Voltage High Speed Power Switch Application
• Wide Safe Operating Area
• Built-in Free Wheeling diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
Equivalent Circuit
C
1 TO-126
1.Emitter 2.Collector 3.Base
B
E
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
* Base Current (Pulse)
Collector Dissipation (TC=25°C)
Storage Temperature
* Pulse Test Pulse Width = 5ms, Duty Cycle 1.0%
Value
700
400
12
4
8
2
4
30
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICES
ICEO
IEBO
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
IC = 1mA, IE = 0
IC = 5mA, IB = 0
IE = 1mA, IC = 0
VCE = 700V, VEB = 0
VCE = 400V, IB = 0
VEB = 12V, IC = 0
VCE = 5V, IC = 10mA
VCE = 5V, IC = 2A
Min.
700
400
12
10
8
Typ.
Max.
100
250
100
40
Units
V
V
V
µA
µA
µA
©2005 Fairchild Semiconductor Corporation
FJE5304D Rev. B1
1
www.fairchildsemi.com


FJE5304D 데이터시트, 핀배열, 회로
Electrical Characteristics (Continued) TC = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Vf Internal Diode Forward Voltage Drop
Inductive Load Switching (VCC = 200V)
tstg Storage Time
tf Fall Time
Resistive Load Switching (VCC = 250V)
tstg Storage Time
tf Fall Time
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.2A
IC = 2.5A, IB = 0.5A
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.2A
IC = 2.5A, IB = 0.5A
IF = 2A
IC = 2A, IB1 = 0.4A
VBE(off) = -5V,
L = 200µH
IC = 2A, IB1 = IB2 = 0.4A
TP = 30µs
* Pulse test: PW 300µs, Duty cycle 2%
Thermal Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Max.
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
4.17
83.3
Min.
Typ.
0.6
0.1
0.2
Max.
0.7
1.0
1.5
1.1
1.2
1.3
2.5
Units
V
V
V
µs
2.9 µs
Units
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FJE5304D
Device
FJE5304D
Package
TO-126
Reel Size
--
Tape Width
--
Quantity
--
FJE5304D Rev. B1
2 www.fairchildsemi.com




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FJE5304D transistor

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FJE5304D

NPN Triple Diffused Planar Silicon Transistor - Fairchild Semiconductor