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PDF BF494 Data sheet ( Hoja de datos )
| Número de pieza | BF494 | |
| Descripción | NPN RF Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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BF494
NPN RF Transistor
July 2006
tm
TO-92
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
1. Collector 2. Emitter 3. Base
Value
Unit
VCEO
Collector-Emitter Voltage
20
VCBO
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
5.0
IC Collector Current - Continuous
30
TJ Junction Temperature
150
TSTG
Storage Temperature Range
- 55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
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V
V
V
mA
°C
°C
Symbol
Parameter
Value
Unit
PD
RθJC
RθJA
Total Device Dissipation, by RθJA
Derate above 25°C
Thermal Resistance, Junction to case
Thermal Resistance, Junction to Ambient
350 mW
2.8 mW/°C
125 °C/W
357 °C/W
Electrical Characteristics* TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
hFE
VCE(sat)
VBE(sat)
VBE(ON)
Collector-Emitter Breakdown Voltage
Collector-Base BreakdownVoltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 1.0mA, IB = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCE = 40V, VEB = 0V
VCE = 10V, IC = 1mA
IC = 10mA, IB = 5mA
IC = 10mA, IB = 5mA
VCE = 10V, IC = 10mA
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Min.
20
30
5.0
67
650
Max.
10
222
0.2
0.92
740
Units
V
V
V
nA
V
V
mV
©2006 Fairchild Semiconductor Corporation
BF494 Rev. A
1
www.fairchildsemi.com
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