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Allegro MicroSystems |
STD03N and STD03P
Darlington Transistors for Audio Amplifiers
Features and Benefits
▪ Built-in temperature compensation diodes
▪ High power (160 W) handling in a small package
(TO-3P), for minimized heat sink requirements
▪ Built-in drivers and temperature compensation diodes,
reducing external component count and simplifying
circuit design
▪ NPN and PNP versions
▪ Emitter terminals placed symmetrically, pin 5 on NPN
and pin 1 on PNP models, allowing adjacent placement on
PCB to minimize trace length and output skew when used
in pairs
▪ Approved by major manufacturers
Description
The STD03N and STD03Pare enhanced Darlington transistors
with built-in drivers and temperature compensation diode.
Manufactured using the unique Sanken thin-wafer production
technology, these devices achieve higher power levels through
decreased thermal resistance, and can withstand higher voltages
than similar devices on the market.
The temperature compensation diode is integrated on the same
chip as the power transistors. By this design, the STD03N and
STD03P eliminate delays that would otherwise be induced
between thermal sensing at the heat source, and the operation of
the compensation circuitry. Thus, these transistors are ideal for
applications where enhanced thermal stability is required.
Package: 5 pin TO-3P (MT-100)
This device is provided in a 5-pin TO-3P plastic package with
pin 4 removed. Contact Allegro® for application support and
additional information on device performance.
Applications include:
▪ General amplifier applications
▪ Public address amplifiers
▪ Carwww.DataSheet4U.com audio amplifiers
STD03N
STD03P
Not to scale
12345
12345
Emitter pins symmetrical
Equivalent Circuits
STD03N
3
1
4
STD03P
1
25
5
3
Datasheet 28104.00a
STD03N and
STD03P
Darlington Transistors for Audio Amplifiers
SELECTION GUIDE
Part Number
STD03N*
STD03P*
Type
NPN
PNP
hFE Rating
Range O: 5000 to 12000
Range Y: 8000 to 20000
Range O: 5000 to 12000
Range Y: 8000 to 20000
Packing
Bulk, 100 pieces
*Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y,
depending upon availability.
ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Characteristic
Symbol
Rating
Collector-Base Voltage1
VCBO
160
Collector-Emitter Voltage1
VCEO
160
Emitter-Base Voltage1
VEBO
5
Collector Current1
IC 15
Base Current1
IB 1
Collector Power Dissipation2
PC 160
Diode Forward Current
IF 10
Junction Temperature
TJ 150
Storage Temperature
Tstg –55 to150
1For PNP type (STD03P), voltage and current values are negative.
2TC = 25°C.
Unit
V
V
V
A
A
W
mA
°C
°C
ELECTRICAL CHARACTERISTICS at TA = 25°C
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max. Unit
Collector-Cutoff Current1
ICBO
VCB = 160 V
– – 100 μA
Emitter Cutoff Current1
IEBO
VEB = 5 V
– – 100 μA
Collector-Emitter Voltage1
VCEO IC = 30 mA
160 –
–V
DC Current Transfer Ratio2,3
hFE VCE = 4 V, IC = 10 A
5000
–
20000
–
Collector-Emitter Saturation Voltage
VCE(sat) IC = 10 A, IB = 10 mA
– – –2.0 V
Base-Emitter Saturation Voltage
VBE(sat) IC = 10 A, IB = 10 mA
– – –2.5 V
Base-Emitter Voltage
VBE
STD03N
STD03P
VCE = 20 V, IC = 40 mA
VCE = –20 V, IC = –40 mA
– 1190 – mV
– 1200 – mV
Diode Forward Voltage
VF
STD03N
STD03P
IF = 2.5 mA
IF = 2.5 mA
– 705 – mV
– 1540 – mV
1For PNP type (STD03P), voltage and current values are negative.
2hFE rating: 5000 to 12000(O brand on package), 8000 to 20000 (Y).
3When the transistor is used in pairs, the following conditions must be satisfied: Total VF ≤ Total VBE of the transistors (the above measurement
conditions shall be applied), and ΔV = 0 to 500 mV.
All performance characteristics given are typical values for circuit or
system baseline design only and are at the nominal operating voltage and
an ambient temperature of +25°C, unless otherwise stated.
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
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