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MW6S004NT1 반도체 회로 부품 판매점

RF Power Field Effect Transistor



Freescale Semiconductor 로고
Freescale Semiconductor
MW6S004NT1 데이터시트, 핀배열, 회로
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for Class A or Class AB base station applications with frequencies
up to 2000 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
Typical Two - Tone Performance
PoPuto=w4erWGaatitns
PEP
— 18
dB
@
1960
MHz,
28
Volts,
IDQ
=
50
mA,
Drain Efficiency — 33%
IMD — - 34 dBc
Typical Two - Tone Performance
Pout = 4 Watts PEP
@
900
MHz,
28
Volts,
IDQ
=
50
mA,
Power Gain — 19 dB
Drain Efficiency — 33%
IMD — - 39 dBc
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output
Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
On - Chip RF Feedback for Broadband Stability
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MW6S004N
Rev. 2, 2/2007
MW6S004NT1
1 - 2000 MHz, 4 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD 1.5
PLASTIC
Table 1. Maximum Ratings
www.DataSheet4U.com
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TJ
- 0.5, +68
- 0.5, +12
- 65 to +150
150
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 76°C, 4 W PEP, Two - Tone
Case Temperature 79°C, 4 W CW
RθJC
8.8
8.5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6S004NT1
1


MW6S004NT1 데이터시트, 핀배열, 회로
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1 260
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50 mAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 50 mAdc)
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 50 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 50 mAdc)
IDSS
IDSS
IGSS
VGS(th)
VGS(Q)
VGG(Q)
VDS(on)
1.2
2.2
— 10
— 10
— 500
2 2.7
2.7 —
3 4.2
0.27 0.37
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 21 —
Coss
25
Ciss — 30 —
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP, f1 = 1960 MHz,
f2 = 1960.1 MHz, Two - Tone Test
Power Gain
Gps 16.5 18
20
Drain Efficiency
ηD 28 33 —
Intermodulation Distortion
IMD — - 34 - 28
Input Return Loss
IRL — - 12 - 10
Typical Performances (In Freescale 900 MHz Demo Board, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP,
f = 900 MHz, Two - Tone Test, 100 kHz Tone Spacing
Power Gain
Gps — 19 —
Drain Efficiency
ηD — 33 —
Intermodulation Distortion
IMD — - 39 —
Input Return Loss
IRL — - 12 —
1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board.
Refer to Test Circuit Schematic.
Unit
°C
Unit
μAdc
μAdc
nAdc
Vdc
Vdc
Vdc
Vdc
pF
pF
pF
dB
%
dBc
dB
dB
%
dBc
dB
MW6S004NT1
2
RF Device Data
Freescale Semiconductor




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RF Power Field Effect Transistor - Freescale Semiconductor